In this work, amorphous silicon films with preformed a-Si lines were crystallized using a diode pumped solid state green laser irradiating at 532 nm. The possibility of controllable formation of grain boundaries was investigated. The crystallization processes in the rapidly melted silicon films were discussed. The influence of the crystallization parameters (i.e., energy density, scan velocity, etc.) and structure type (i.e., with and without preformed lines) on properties of the crystallized films was studied. The laser treatment with an energy density of 1.00 J/cm2 at a laser pulse overlapping of 90% provided the optimal crystallization process with predefined grain boundary location. X-ray diffraction (XRD), SEM and AFM microscopy have been used to characterize the crystallized silicon films.