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ECS Meeting Abstracts, 25(MA2005-02), p. 891-891, 2006

DOI: 10.1149/ma2005-02/25/891

The Electrochemical Society, ECS Transactions, 15(1), p. 37-42, 2006

DOI: 10.1149/1.2214617

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Investigation of Temperature Induced Structural Transformations in Tungsten Oxide (WO3) Thin Films

Journal article published in 2006 by Ramana V. Chintalapalle, Satoshi Utsunomiya ORCID, C. M. Julien, Udo Becker
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Tungsten oxide (WO3) thin films were produced by pulsed laser depositon and the effect of temperature on their structure studied. Characterization of PLD WO3 thin films as a function of growth temperature using X-ray diffraction (XRD) and Raman spectroscopy (RS) indicated that the films grown at room temperature were nearly stoichiometric and amorphous. The structural order improves with the increase in temperature. WO3 thin films formed at temperatures {greater than or equal to} 400 oC were non- stoichiometric with oxygen deficiency. The amorphous to polycrystalline (monoclinic) structural transition occurs at a growth temperature of 300 oC.