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Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications III

DOI: 10.1117/12.463422

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<title>Proton radiation damage in high-resistivity n-type silicon CCDs</title>

Proceedings article published in 2002 by Christopher Bebek, Donald E. Groom, Steven E. Holland, Armin Karcher, William F. Kolbe, Julie S. Lee, Michael E. Levi ORCID, Nicholas P. Palaio, Bojan T. Turko, Michela C. Uslenghi ORCID, M. T. Wagner, Guobin Wang
This paper is available in a repository.
This paper is available in a repository.

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Abstract

A new type of p-channel CCD constructed on high-resistivity n-type silicon was exposed to 12 MeV protons at doses up to 1x1011 protons/cm2. The charge transfer efficiency was measured as a function of radiation dose and temperature. We previously reported that these CCDs are significantly more tolerant to radiation damage than conventional n-channel devices. In the work reported here, we used pocket pumping techniques and charge transfer efficiency measurements to determine the identity and concentrations of radiation induced traps present in the damaged devices.