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2012 Symposium on VLSI Technology (VLSIT)

DOI: 10.1109/vlsit.2012.6242514

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Segmented-channel Si1−xGex/Si pMOSFET for improved ION and reduced variability

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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