Published in
2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
DOI: 10.1109/vlsi-tsa.2013.6545611
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A comparative study of gate first and last Si MOSFETs fabrication processes using ALD beryllium oxide as an interface passivation layer
Proceedings article published in 2013 by
J. H. Yum,
H. S. Shin,
R. M. Mushinski 
,
T. W. Hudnall,
J. Oh,
W. Y. Loh,
C. W. Bielawski,
G. Bersuker,
S. K. Banerjee,
W. E. Wang,
P. D. Kirsch,
R. Jammy
,
T. W. Hudnall,
J. Oh,
W. Y. Loh,
C. W. Bielawski,
G. Bersuker,
S. K. Banerjee,
W. E. Wang,
P. D. Kirsch,
R. Jammy
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