Published in
2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
DOI: 10.1109/vlsi-tsa.2013.6545602
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Effect of ALD oxidant and channel doping on positive bias stress characteristics of surface channel In0.53Ga0.47As nMOSFETs
Proceedings article published in 2013 by
C. D. Young,
R. J. W. Hill,
K. Matthews,
W. Wang,
C. Hinkle,
R. M. Wallace 
,
W. Loh,
C. Hobbs,
P. D. Kirsch,
R. Jammy
,
W. Loh,
C. Hobbs,
P. D. Kirsch,
R. Jammy
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