Published in
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding
DOI: 10.1109/nvmts.2011.6137105
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From dielectric failure to memory function: Learning from oxide breakdown for improved understanding of resistive switching memories
Proceedings article published in 2011 by
Jordi Sune,
Enrique Miranda 
,
David Jimenez ,
Shibing Long,
Ming Liu
,
David Jimenez ,
Shibing Long,
Ming Liu
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