Published in
2012 15th International Workshop on Computational Electronics
DOI: 10.1109/iwce.2012.6242844
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Electron-hole transport asymmetry in boron-doped graphene field effect transistors
Journal article published in 2012 by
P. Marconcini,
A. Cresti,
F. Triozon,
G. Fiori,
B. Biel 
,
Y.-M. Niquet,
M. Macucci,
S. Roche,
Ieee
,
Y.-M. Niquet,
M. Macucci,
S. Roche,
Ieee
This paper was not found in any repository, but could be made available legally by the author.
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