Published in
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
DOI: 10.1109/ispsd.2014.6856038
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Fast recovery performance of vertical GaN Schottky barrier diodes on low-dislocation-density GaN substrates
Proceedings article published in 2014 by
Masaki Ueno,
Susumu Yoshimoto,
Kuniaki Ishihara,
Masaya Okada,
Kazuhide Sumiyoshi,
Hidenori Hirano,
Fuminori Mitsuhashi,
Yusuke Yoshizumi,
Takashi Ishizuka,
Makoto Kiyama
This paper was not found in any repository, but could be made available legally by the author.
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