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2012 24th International Symposium on Power Semiconductor Devices and ICs

DOI: 10.1109/ispsd.2012.6229073

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Specific features of SiC-IGBT with 13kV switching

Proceedings article published in 2012 by Masaya Ueno, Masataka Miyake, Mitiko Miura-Mattausch
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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