10×10nm<sup>2</sup> Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation

Govoreanu, B.; Kar, G. S.; Chen, Y.-Y.; Paraschiv, V.; Kubicek, S.; Fantini, A.; Radu, I. P.; Goux, L.; Clima, S.; Degraeve, R.; Jossart, N.; Richard, O.; Vandeweyer, T.; Seo, K.; Hendrickx, P.; Pourtois, G.; Bender, H.; Altimime, L.; Wouters, D. J.; Kittl, J. A.; Jurczak, M.; Ieee,

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2011 International Electron Devices Meeting

DOI: 10.1109/iedm.2011.6131652

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10×10nm<sup>2</sup> Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation

Journal article published in 2011 by B. Govoreanu, G. S. Kar, Y.-Y. Chen, V. Paraschiv, S. Kubicek, A. Fantini, I. P. Radu, L. Goux, S. Clima, R. Degraeve, N. Jossart, O. Richard, T. Vandeweyer, K. Seo, P. Hendrickx and other authors.

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10×10nm<sup>2</sup> Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation