Spatial variation of TSV capacitance and method of stabilization with Al<inf>2</inf>O<inf>3</inf>-induced negative fixed charge at the silicon-liner interface
Proceedings article published in 2011 by
L. Zhang,
R. I. Made 
,
H. Y. Li,
S. Gao,
G. Q. Lo,
D. L. Kwong,
C. S. Tan
,
H. Y. Li,
S. Gao,
G. Q. Lo,
D. L. Kwong,
C. S. Tan
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