High speed 45nm gate length CMOSFETs integrated into a 90nm bulk technology incorporating strain engineering

Chan, V.; Rengarajan, R.; Rovedo, N.; Jin, W.; Wei Jin,; Hook, T.; Nguyen, P.; Chen, J.; Jia Chen,; Nowak, E.; Chen, X.-D.; Xiang-Dong Chen,; Lea, D.; Chakravarti, A.; Ku, V.; Yang, S.; Steegen, A.; Baiocco, C.; Shafer, P.; Hung Ng,; Ng, H.; Huang, S.-F.; Shih-Fen Huang,; Wann, C.

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IEEE International Electron Devices Meeting 2003

DOI: 10.1109/iedm.2003.1269170

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High speed 45nm gate length CMOSFETs integrated into a 90nm bulk technology incorporating strain engineering

Proceedings article published in 2004 by V. Chan, R. Rengarajan, N. Rovedo, W. Jin, Wei Jin, T. Hook, P. Nguyen, J. Chen, Jia Chen, E. Nowak, X.-D. Chen, Xiang-Dong Chen, D. Lea, A. Chakravarti, V. Ku and other authors.

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High speed 45nm gate length CMOSFETs integrated into a 90nm bulk technology incorporating strain engineering