High performance single work-function tungsten gate CMOS devices for gigabit DRAM

Woo-Tag Kang,; Gluschenkov, O.; Boyong He,; Yujun Li,; Malik, R.; Clevenger, L.; McStay, I.; Robl, W.; Vollertsen, R.; Masse, G.; La Rosa, G.; Lee, K.; Murthy, C.; Parks, C.; Mohler, R.; Bergner, W.; Crabbd, E.

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International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

DOI: 10.1109/iedm.2001.979402

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High performance single work-function tungsten gate CMOS devices for gigabit DRAM

Proceedings article published in 1970 by Woo-Tag Kang, O. Gluschenkov, Boyong He, Yujun Li, R. Malik, L. Clevenger, I. McStay, W. Robl, R. Vollertsen, G. Masse, G. La Rosa, K. Lee, C. Murthy, C. Parks, R. Mohler and other authors.

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High performance single work-function tungsten gate CMOS devices for gigabit DRAM