Published in

IOP Publishing, Nanotechnology, 3(17), p. 622-633, 2006

DOI: 10.1088/0957-4484/17/3/002

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Simulation of the electric response of DNA translocation through a semiconductor nanopore–capacitor

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

A multi-scale/multi-material computational model for simulation of the electric signal detected on the electrodes of a metal–oxide–semiconductor (MOS) capacitor forming a nanoscale artificial membrane, and containing a nanopore with translocating DNA, is presented. The multi-scale approach is based on the incorporation of a molecular dynamics description of a translocating DNA molecule in the nanopore within a three-dimensional Poisson equation self-consistent scheme involving electrolytic and semiconductor charges for the electrostatic potential calculation. The voltage signal obtained from the simulation supports the possibility for single nucleotide resolution with a nanopore device. The electric signal predicted on the capacitor electrodes complements ongoing experiments exploring the use of nanopores in a MOS capacitor membrane for DNA sequencing.