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72nd Device Research Conference
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Characteristics of In0.17Al0.83N/AlN/GaN MOSHEMTs with steeper than 60 mV/decade sub-threshold slopes in the deep sub-threshold region
Proceedings article published in 2014 by
Zongyang Hu,
Raj Jana,
Meng Qi 
,
Satyaki Ganguly,
Bo Song,
Erhard Kohn,
Debdeep Jena,
Huili Grace Xing
,
Satyaki Ganguly,
Bo Song,
Erhard Kohn,
Debdeep Jena,
Huili Grace Xing
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