Published in
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems
DOI: 10.1109/asdam.2012.6418526
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Distribution of fixed oxide charge in MOS structures with ALD grown Al2O3 studied by capacitance measurements
Proceedings article published in 2012 by
L. Valik,
M. Tapajna,
F. Gucmann,
J. Fedor,
P. Siffalovic 
,
K. Frohlich
,
K. Frohlich
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