Published in
American Institute of Physics, AIP Conference Proceedings, 2013
DOI: 10.1063/1.4848320
Links
Tools
Transition from Schottky-barrier-determined to channel transport regime with low noise in carbon nanotube field effect transistors
Proceedings article published in 2013 by
V. A. Sydoruk 
,
M. V. Petrychuk,
A. Ural,
G. Bosman,
A. Offenhäusser,
S. A. Vitusevich
,
M. V. Petrychuk,
A. Ural,
G. Bosman,
A. Offenhäusser,
S. A. Vitusevich
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Data provided by 