Published in
Instytut Podstaw Informatyki, Acta Physica Polonica A, 6(105), p. 645-650, 2004
DOI: 10.12693/aphyspola.105.645
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MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure
Journal article published in 2004 by
B. J. Kowalski 
,
I. A. Kowalik,
E. Łusakowska,
R. J. Iwanowski,
E. Lusakowska,
M. Sawicki,
J. Sadowski,
I. Grzegory,
S. Porowski
,
I. A. Kowalik,
E. Łusakowska,
R. J. Iwanowski,
E. Lusakowska,
M. Sawicki,
J. Sadowski,
I. Grzegory,
S. Porowski
This paper is made freely available by the publisher.
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Abstract
Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy. Density of the valence band states of MnAs and its changes due to increase of the layer thickness were revealed. ; Comment: 11 pages, 3 figures