Published in

Springer, Journal of Materials Research, 9(15), p. 2020-2026, 2000

DOI: 10.1557/jmr.2000.0290

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Microstructure observations of silicon carbide nanorods

Journal article published in 2000 by H. Y. Peng, X. T. Zhou, H. L. Lai, N. Wang ORCID, S. T. Lee
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

The microstructures of β-SiC nanorods synthesized by hot-filament chemical vapor deposition were studied in detail by high-resolution electron microscopy. Two distinct types of nanorods were identified. The longer nanorods (lengths > 0.1 mm) contained globules at their tips and a relatively low density of stacking faults perpendicular to their [111] growth direction. It was also observed that SiC nanorods that grew along [100] direction contained no planar defects. Meanwhile, Ni was found to be an effective catalyst for SiC nanorod growth. The short nanorods (lengths < 50 nm), which contained no globules at their ends, can grow along [111], [100], or [112] direction. The growth of these nanorods was interpreted by a two-dimensional vapor–solid mechanism.