Published in

Institute of Electrical and Electronics Engineers, IEEE Transactions on Nanotechnology, 5(16), p. 727-735, 2017

DOI: 10.1109/tnano.2017.2665691

Links

Tools

Export citation

Search in Google Scholar

Experimental and simulation study of silicon nanowire transistors using heavily doped channels

Journal article published in 2017 by Vihar P. Georgiev ORCID, Muhammad M. Mirza, Alexandru-Iustin Dochioiu, Fikru Adamu-Lema, Fikru-Adamu Lema, Salvatore M. Amoroso, Ewan Towie, Craig Riddet, Donald A. MacLaren, Asen Asenov, Douglas J. Paul
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

Full text: Download

Green circle
Preprint: archiving allowed
Upload
Green circle
Postprint: archiving allowed
Upload
Red circle
Published version: archiving forbidden
Policy details
Data provided by SHERPA/RoMEO