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American Institute of Physics, Applied Physics Letters, 26(109), p. 263301

DOI: 10.1063/1.4972988

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Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

Journal article published in 2016 by Ivan Isakov ORCID, Alexandra F. Paterson, Olga Solomeshch, Nir Tessler, Qiang Zhang, Jun Li, Xixiang Zhang ORCID, Zhuping Fei, Martin Heeney ORCID, Thomas D. Anthopoulos ORCID
This paper is available in a repository.
This paper is available in a repository.

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Abstract

We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at 30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.