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2016 IEEE Silicon Nanoelectronics Workshop (SNW)

DOI: 10.1109/snw.2016.7578056

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Metallurgical studies of integrable Ni-based contacts for their use in III–V/Si heterogeneous photonics devices

Proceedings article published in 2016 by E. Ghegin, F. Nemouchi, C. Perrin, K. Hoummada, J. Labar, J. Lázár, S. Zhiou, P.-H. Rodriguez ORCID, I. Sagnes, C. Jany
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Opening the way to large bandwidths and high data rates Silicon Photonics is of great interest. In the scope of co-integrating III-V devices with CMOS very large scale integration (VLSI), innovative contacts to III-V materials have to be developed. In this paper we study the metallurgical and electrical properties of Ni-based metallizations to n-InP and p-InGaAs. It appears that the integration of both metallizations must be realized at temperatures lower than or equal to 340 °C starting with that on n-InP.