Published in

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

DOI: 10.1109/vlsi-tsa.2016.7480520

Links

Tools

Export citation

Search in Google Scholar

Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Green circle
Postprint: archiving allowed
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO

Abstract

International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, TAIWAN, APR 25-27, 2016 ; International audience ; Various RRAM concepts are currently being investigated (Oxide based RAM, Conductive Bridge RAM), all showing pros and cons depending on the architecture and memory stack. As the specifications are strongly application-dependent, it is likely that the RRAM technology will be bound to a specific market segment. In this paper, we discuss the potential of RRAM for non-volatile memory applications, among them: storage class memory, embedded memory, programmable logic, mass storage and neuromorphic applications. By means of experimental studies and simulations, we analyze the role of the integrated materials on the memory performances and reliability and try to propose optimized stacks suitable for each targeted application.