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2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

DOI: 10.1109/vlsi-tsa.2016.7480520

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Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, TAIWAN, APR 25-27, 2016 ; International audience ; Various RRAM concepts are currently being investigated (Oxide based RAM, Conductive Bridge RAM), all showing pros and cons depending on the architecture and memory stack. As the specifications are strongly application-dependent, it is likely that the RRAM technology will be bound to a specific market segment. In this paper, we discuss the potential of RRAM for non-volatile memory applications, among them: storage class memory, embedded memory, programmable logic, mass storage and neuromorphic applications. By means of experimental studies and simulations, we analyze the role of the integrated materials on the memory performances and reliability and try to propose optimized stacks suitable for each targeted application.