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American Institute of Physics, APL Materials, 12(4), p. 126103, 2016

DOI: 10.1063/1.4971354

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Experimental and density functional study of Mn doped Bi2Te3topological insulator

Journal article published in 2016 by A. Ghasemi ORCID, D. Kepaptsoglou ORCID, A. I. Figueroa ORCID, G. A. Naydenov, P. J. Hasnip ORCID, M. I. J. Probert ORCID, Q. Ramasse, G. van der Laan ORCID, T. Hesjedal, V. K. Lazarov
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

We present a nanoscale structural and density functional study of the Mn doped 3D topological insulator Bi2Te3. X-ray absorption near edge structure shows that Mn has valency of nominally 2+. Extended x-ray absorption fine structure spectroscopy in combination with electron energy loss spectroscopy (EELS) shows that Mn is a substitutional dopant of Bi and Te and also resides in the van der Waals gap between the quintuple layers of Bi2Te3. Combination of aberration-corrected scanning transmission electron microscopy and EELS shows that Mn substitution of Te occurs in film regions with increased Mn concentration. First-principles calculations show that the Mn dopants favor octahedral sites and are ferromagnetically coupled.