Nano-cathodoluminescence (Nano-CL) reveals optical emission from individual InGaN quantum wells for applications in optoelectronic devices. We show the luminescent intensity decays over time with exposure to the electron beam for energies between 80 and 200 keV. Measurements of the CL intensity over time show an exponential decline in intensity, which we propose is due to the formation of nitrogen Frenkel defects. The measured CL damage decreases with reductions in the electron accelerating voltage and we suggest that the electron induced structural damage may be suppressed below the proposed damage threshold. The electron beam induced damage leads to a non-radiative region that extends over the measured minority carrier diffusion length. Nano-CL may thus serve as a powerful technique to study III-nitride optoelectronics. ; Other ; This work was carried out with the support of the United Kingdom Engineering and Physical Sciences Research Council under Grant Nos. EP/NO17927/1 and EP/J003603/1. R. Oliver acknowledges funding from the European Research Council under the European Community's Seventh Framework Programme (FP7/2007-2013) ERC grant agreement number 279361 (MACONS) and the from the Royal Academy of Engineers/Leverhulme Trust senior research fellowship.