In this paper, optimizations of thermoelectric(TE) properties for the rough surface of the nano-ridge GaAs/AlAs superlattice(SL) structure are investigated. The nano-ridge featured with rough surface at both sides of the SL structure is introduced, where the modification of the phonon spatial confinement and phonon surface roughness scattering are taken into account. The elastic continuum model is employed to calculate the phonon dispersion relation and the related phonon group velocity. Reported experimental results with SL structures were used for verification of our model. The lattice thermal conductivity, electrical conductivity, Seebeck coefficient, and electronic thermal conductivity are calculated by Boltzmann transport equations and relaxation time approximation. Simulation results show that the nano-ridge SL structure with certain periodicity and phonon surface roughness scattering have strong influences on the TE properties. Highest ZT in our calculation is 1.285 at 300K and the ZT value of 3.04 is obtained at 1000K.