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National Academy of Sciences, Proceedings of the National Academy of Sciences, 32(103), p. 11834-11837, 2006

DOI: 10.1073/pnas.0605033103

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Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors

Journal article published in 2006 by Anoop S. Dhoot, Jonathan D. Yuen, Martin Heeney ORCID, Iain McCulloch, Daniel Moses, Alan J. Heeger
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2- b ]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (10 15 cm −2 ) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 × 10 6 A/cm 2 , and high metallic conductivities, 10 4 S/cm, in the FET channel; at 4.2 K, the current density is sustained at 10 7 A/cm 2 . Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is ≈3.5 cm 2 ·V −1 ·s −1 at 297 K, comparable with that found in fully crystalline organic devices.