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Study of the defect structure, compositional and electrical properties of Er_2O_3-doped n-type GaSb : Te crystals grown by the vertical Bridgman technique

Journal article published in 2002 by Jl L. Plaza, Pedro Hidalgo Alcalde, Bianchi Méndez Martín ORCID, Javier Piqueras de Noriega, E. Dieguez
This paper was not found in any repository; the policy of its publisher is unknown or unclear.
This paper was not found in any repository; the policy of its publisher is unknown or unclear.

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Abstract

The defect structure of Te-doped GaSb samples co-doped with Er_2O_3 and grown by the vertical Bridgman technique has been analysed. This study was carried out for different Er and Te concentrations. The defect structure of the samples has been analysed by means of cathodoluminescence (CL), scanning electron microscopy (SEM) and wavelength dispersive X-ray microanalysis (WDX). The effect of the defect structure and sample composition on the electrical properties of the material has been established taking into account the results obtained by means of the van der Pauw technique.