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American Institute of Physics, Applied Physics Letters, 4(109), p. 043301

DOI: 10.1063/1.4960096

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Dielectric interface-dependent spatial charge distribution in ambipolar polymer semiconductors embedded in dual-gate field-effect transistors:

This paper is available in a repository.
This paper is available in a repository.

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Abstract

The spatial charge distribution in diketopyrrolopyrrole-containing ambipolar polymeric semiconductors embedded in dual-gate field-effect transistors (DGFETs) was investigated. The DGFETs have identical active channel layers but two different channel/gate interfaces, with a CYTOP™ organic dielectric layer for the top-gate and an octadecyltrichlorosilane (ODTS) self-assembled monolayer-treated inorganic SiO2 dielectric for the bottom-gate, respectively. Temperature-dependent transfer measurements of the DGFETs were conducted to examine the charge transport at each interface. By fitting the temperature-dependent measurement results to the modified Vissenberg-Matters model, it can be inferred that the top-channel interfacing with the fluorinated organic dielectric layers has confined charge transport to two-dimensions, whereas the bottom-channel interfacing with the ODTS-treated SiO2 dielectric layers has three-dimensional charge transport.