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Institute of Electrical and Electronics Engineers, IEEE Transactions on Nuclear Science, 4(63), p. 2122-2128

DOI: 10.1109/tns.2016.2527781

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Methodologies for the Statistical Analysis of Memory Response to Radiation

Journal article published in 2016 by Alexandre L. Bosser, Viyas Gupta, Georgios Tsiligiannis ORCID, Christopher D. Frost, Ali Mohammad Zadeh, Jukka Jaatinen, Arto Javanainen, Helmut Puchner, Frédéric Saigne, Ari Virtanen, Frédéric Wrobel, Luigi Dilillo
This paper is available in a repository.
This paper is available in a repository.

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Abstract

Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study.