The properties of co-sputtered Cu embedded amorphous SiC were studied. The effect of the microstructure features on the electrical conduction of the SiC films, with Cu volume% between 0% and 57%, was analysed by temperature dependent measurements, along with an effective-medium approximation model. The electrical conduction in Cu embedded amorphous SiC, was attributed to the tunnelling mechanism. Dielectric constants of the Cu embedded amorphous SiC composites were measured from purposely fabricated micro-capacitors using Cu embedded amorphous SiC composites as the dielectric layer, showing a decrease in dielectric constant with increasing Cu volume%. The electrical contacts between metal electrodes, i.e. Cu and Au, and Cu embedded amorphous SiC composites resulted in Schottky emission.