Published in
2013 IEEE International Reliability Physics Symposium (IRPS)
DOI: 10.1109/irps.2013.6531983
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GaN-HEMTs devices with single- and double-heterostructure for power switching applications
Proceedings article published in 2013 by
G. Meneghesso 
,
A. Zanandrea,
A. Stocco,
I. Rossetto,
C. De Santi,
C. D. Santi,
F. Rampazzo,
M. Meneghini ,
E. Zanoni,
E. Bahat Treidel,
O. Hilt,
P. Ivo,
J. Wuerfl
,
A. Zanandrea,
A. Stocco,
I. Rossetto,
C. De Santi,
C. D. Santi,
F. Rampazzo,
M. Meneghini ,
E. Zanoni,
E. Bahat Treidel,
O. Hilt,
P. Ivo,
J. Wuerfl
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Abstract
We report on an extensive study of single- (SH) and double-heterostructure (DH) HEMTs based on gallium nitride, for power switching applications. The analysis is based on dc, pulsed and breakdown measurements, which were carried out on five different epitaxial structures. © 2013 IEEE.