Institute of Electrical and Electronics Engineers, IEEE Transactions on Nuclear Science, 6(59), p. 2979-2986, 2012
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In this work, we analyzed the effects of alpha and ultraviolet irradiation on encapsulated and non-encapsulated thin-film-transistors. Up to-35% mobility variation occurs on unencapsulated devices after UV irradiation. The same UV irradiation induced less than -3%on encapsulated devices. By investigating the charge trapping kinetics, we show that the increased robustness comes from the reduced air absorption, rather than solely attenuating UV the components.