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2012 IEEE International Reliability Physics Symposium (IRPS)

DOI: 10.1109/irps.2012.6241818

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Effects of Channel Hot Carrier Stress on III-V Bulk Planar MOSFETs

Proceedings article published in 2012 by N. Wrachien, A. Cester, D. Bari, E. Zanoni, G. Meneghesso ORCID, Y. Q. Wu, P. D. Ye
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Abstract

We performed channel hot carrier stress on enhancement-mode, inversion-type III-V MOSFETs with Al2O3 gate dielectric. The stress induces subthreshold swing degradation, increase on the threshold voltage and reduction of drain saturation current. Nonetheless, no mobility degradation can be appreciated at least with a stress time as long as 105 s.