2011 International Conference on Infrared, Millimeter, and Terahertz Waves
DOI: 10.1109/irmmw-thz.2011.6104930
Full text: Unavailable
Self-assembled nanowires represent a new interesting technology to be explored in order to increase the cutoff frequency of electronic THz detectors. They can be developed in field effect transistor (FET) and diode geometries exploiting non-linearities of either the transconductance or the current-voltage characteristic as detection mechanism.