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American Institute of Physics, Journal of Applied Physics, 13(119), p. 134502

DOI: 10.1063/1.4945579

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Enhanced oxygen vacancy diffusion in Ta2O5 resistive memory devices due to infinitely adaptive crystal structure

Journal article published in 2016 by Hao Jiang ORCID, Derek A. Stewart ORCID
This paper is available in a repository.
This paper is available in a repository.

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