Published in
American Institute of Physics, Applied Physics Letters, 13(108), p. 133503, 2016
DOI: 10.1063/1.4945267
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Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy
Journal article published in 2016 by
Masataka Higashiwaki 
,
Keita Konishi,
Kohei Sasaki,
Ken Goto,
Kazushiro Nomura,
Quang Tu Thieu,
Rie Togashi,
Hisashi Murakami,
Yoshinao Kumagai,
Bo Monemar,
Akinori Koukitu,
Akito Kuramata,
Shigenobu Yamakoshi
,
Keita Konishi,
Kohei Sasaki,
Ken Goto,
Kazushiro Nomura,
Quang Tu Thieu,
Rie Togashi,
Hisashi Murakami,
Yoshinao Kumagai,
Bo Monemar,
Akinori Koukitu,
Akito Kuramata,
Shigenobu Yamakoshi
This paper was not found in any repository, but could be made available legally by the author.
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