Published in
American Institute of Physics, Journal of Applied Physics, 12(119), p. 125303
DOI: 10.1063/1.4944718
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Growth and characterization of highly tensile strained Ge1−xSnx formed on relaxed InyGa1−yP buffer layers
Journal article published in 2016 by
Wei Wang,
Wan Khai Loke 
,
Tingting Yin,
Zheng Zhang,
Vijay Richard D'Costa ,
Yuan Dong,
Gengchiau Liang,
Jisheng Pan,
Zexiang Shen,
Soon Fatt Yoon,
Eng Soon Tok,
Yee-Chia Yeo
,
Tingting Yin,
Zheng Zhang,
Vijay Richard D'Costa ,
Yuan Dong,
Gengchiau Liang,
Jisheng Pan,
Zexiang Shen,
Soon Fatt Yoon,
Eng Soon Tok,
Yee-Chia Yeo
This paper was not found in any repository, but could be made available legally by the author.
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