Published in
IOP Publishing, Japanese Journal of Applied Physics, 4S(55), p. 04EB06, 2016
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Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET
Journal article published in 2016 by
Yukinori Morita,
Koichi Fukuda 
,
Takahiro Mori,
Wataru Mizubayashi,
Shinji Migita,
Kazuhiko Endo,
Shin-Ichi O’uchi,
Yongxun Liu,
Meishoku Masahara,
Takashi Matsukawa,
Hiroyuki Ota
,
Takahiro Mori,
Wataru Mizubayashi,
Shinji Migita,
Kazuhiko Endo,
Shin-Ichi O’uchi,
Yongxun Liu,
Meishoku Masahara,
Takashi Matsukawa,
Hiroyuki Ota
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Abstract
Abstract A novel tunnel FinFET equipped with a SiGe/Si heterojunction and a multilayer fin-channel has been experimentally demonstrated. A high-quality SiGe layer is epitaxially grown on a heavily doped Si source as a tunnel junction. A FinFET-like hetero-multilayer channel with a trigate configuration significantly increases the drain current compared with conventional SiGe/Si heterojunction parallel-plate tunnel FETs.