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The Electrochemical Society, ECS Journal of Solid State Science and Technology, 6(1), p. P310-P314

DOI: 10.1149/2.001301jss

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InGaAs MOS Transistors Fabricated through a Digital-Etch Gate-Recess Process and the Influence of Forming Gas Anneal on Their Electrical Behavior

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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