Laser ablation has attracted special interest for the formation of thin films compared with other formation technique. A distinctive feature of laser ablation is that it allows high quality and stoichiometry of films of even very complex element material. In this presentation, laser ablation of AgInSe ₂ chalcopyrite semiconductor will be discussed in which it is difficult to maintain stoichiometry by conventional method. High Quality AgInSe ₂ (AIS) films were grown on Glass substrates by the ultra-high-vacuum pulsed laser deposition technique from the AIS target synthesized from high-purity materials. The X-ray diffraction studies of the films show that films are textured in (112) direction. The substrate temperature appears to influence the properties of films. Increase in substrate temperature results in a more ordered structure. Compositional analysis has been carried out by EDAX. It is observed that compositional stoichiometry is maintained to a greater extent by PLD technique than other traditional methods like thermal evaporation. The optical studies of the films show that the optical band gap is about 1.20 eV.