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MDPI, International Journal of Molecular Sciences, 9(12), p. 5719-5735, 2011

DOI: 10.3390/ijms12095719

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Selective Growth of α-Sexithiophene by Using Silicon Oxides Patterns

Journal article published in 2011 by Cristiano Albonetti, Marianna Barbalinardo, Silvia Milita, Massimiliano Cavallini, Fabiola Liscio, Jean-François Moulin, Fabio Biscarini ORCID
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

A process for fabricating ordered organic films on large area is presented. The process allows growing sexithiophene ultra-thin films at precise locations on patterned Si/SiO(x) substrates by driving the orientation of growth. This process combines the parallel local anodic oxidation of Si/SiO(x) substrates with the selective arrangement of molecular ultra-thin film. The former is used to fabricate silicon oxide arrays of parallel lines of 400 nm in width over an area of 1 cm(2). Selective growth arises from the interplay between kinetic growth parameters and preferential interactions with the patterned surface. The result is an ultra-thin film of organic molecules that is conformal to the features of the fabricated motives.