Published in
MAIK Nauka/Interperiodica, Semiconductors, 1(44), p. 123-126
DOI: 10.1134/s1063782610010215
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Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
Journal article published in 2010 by
W. V. Lundin,
E. E. Zavarin,
M. A. Sinitsyn,
A. V. Sakharov,
S. O. Usov,
A. E. Nikolaev,
D. V. Davydov,
N. A. Cherkashin 
,
A. F. Tsatsulnikov
,
A. F. Tsatsulnikov
This paper was not found in any repository, but could be made available legally by the author.
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