Published in
MAIK Nauka/Interperiodica, Semiconductors, 9(36), p. 1020-1026
DOI: 10.1134/1.1507285
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The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix
Journal article published in 2002 by
D. S. Sizov,
M. V. Maksimov,
A. F. Tsatsul’nikov,
N. A. Cherkashin 
,
N. V. Kryzhanovskaya,
A. B. Zhukov,
N. A. Maleev,
S. S. Mikhrin,
A. P. Vasil’ev,
R. Selin,
V. M. Ustinov,
N. N. Ledentsov,
D. Bimberg,
Z.-H. I. Alferov
,
N. V. Kryzhanovskaya,
A. B. Zhukov,
N. A. Maleev,
S. S. Mikhrin,
A. P. Vasil’ev,
R. Selin,
V. M. Ustinov,
N. N. Ledentsov,
D. Bimberg,
Z.-H. I. Alferov
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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