Published in
MAIK Nauka/Interperiodica, Technical Physics Letters, 6(24), p. 467-469
DOI: 10.1134/1.1262149
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Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge
Journal article published in 1998 by
V. V. Mamutin,
V. N. Zhmerik,
T. V. Shubina,
A. A. Toropov 
,
A. V. Lebedev,
V. A. Vekshin,
S. V. Ivanov,
P. S. Kop’ev
,
A. V. Lebedev,
V. A. Vekshin,
S. V. Ivanov,
P. S. Kop’ev
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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