IOP Publishing, Journal of Physics D: Applied Physics, 38(45), p. 385304, 2012
DOI: 10.1088/0022-3727/45/38/385304
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Abstract Atomically thin hexagonal boron nitride films were grown on both the top and bottom surfaces of a polycrystalline Co or Ni film by annealing a Co (Ni)/amorphous boron nitride/SiO2 structure in vacuum. This method of growing hexagonal boron nitride is much simpler than other methods, such as thermal chemical vapour deposition. B and N atoms diffuse through the metal film, although N is almost completely insoluble in both Co and Ni, and precipitation occurs at the topmost surface. The mass transport is considered to be caused by grain boundary diffusion.