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IOP Publishing, Journal of Physics D: Applied Physics, 8(42), p. 085117, 2009

DOI: 10.1088/0022-3727/42/8/085117

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Fabrication and modulation characteristics of 1.3 µm p-doped InAs quantum dot vertical cavity surface emitting lasers

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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