Published in
American Institute of Physics, APL Materials, 6(3), p. 062506, 2015
DOI: 10.1063/1.4919803
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Tailoring the electronic transitions of NdNiO_3 films through (111)_pc oriented interfaces
,
M. Gibert,
V. Bisogni,
F. He ,
R. Sutarto ,
M. Viret ,
P. Zubko,
R. Scherwitzl,
G. A. Sawatzky,
T. Schmitt,
J.-M. Triscone
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Abstract
Bulk NdNiO_3 and thin films grown along the pseudocubic (001)_pc axis display a 1st order metal to insulator transition (MIT) together with a Néel transition at T=200K. Here, we show that for NdNiO3 films deposited on (111)_pc NdGaO_3 the MIT occurs at T=335K and the Néel transition at T=230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries and lattice parameters, we demonstrate a particularly large tuning when the epitaxy is realized on (111)_pc surfaces. We attribute this effect to the specific lattice matching conditions imposed along this direction when using orthorhombic substrates.